Plasma treatment equipment

ABSTRACT

The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to plasma treatment equipment.

2. Description of Related Art

Plasma treatment equipment shown in FIG. 12 has been known heretofore asplasma treatment equipment.

In the plasma treatment equipment, a matching circuit is providedbetween a high frequency power source 1 and a plasma excitationelectrode 4. The matching circuit is a circuit for matching theimpedance between these high frequency power source 1 and the plasmaexcitation electrode 4.

The high frequency power is supplied from the high frequency powersource 1 to the plasma excitation electrode 4 by way of a matchingcircuit and through a feeder plate 3.

These matching circuit and feeder plate 3 are contained in a matchingbox 2 formed of a housing 21 consisting of conductive material.

A shower plate 5 having a number of holes 7 is provided under the plasmaexcitation electrode (cathode) 4, and a space 6 is defined by the plasmaexcitation electrode 4 and the shower plate 5. A gas guide pipe 17 isprovided to the space 6. Gas introduced from the gas guide pipe 17 issupplied to a chamber 60 defined by a chamber wall 10 through the holes7 of the shower plate 5. 9 denotes an insulator for insulation betweenthe chamber wall 10 and the plasma excitation electrode (cathode) 4. Anexhaust system is omitted in this drawing.

On the other hand, in the chamber 60, a wafer suscepter (suscepterelectrode) 8 serves as a plasma excitation electrode having a base plate16 placed thereon is provided, and a suscepter shield 12 is provided onthe periphery of the wafer suscepter 8. The wafer suscepter 8 andsuscepter shield 12 are vertically movable by means of a bellows 11 sothat the distance between the plasma excitation electrodes 4 and 8 isadjustable.

The second high frequency power source 15 is connected to the wafersuscepter 8 through the matching circuit contained in a matching box 14.The DC potential of the chamber is the same as that of the susceptershield 12.

Another conventional plasma treatment equipment is shown in FIG. 14.

The plasma treatment equipment shown in FIG. 12 is a so-called doublewave excitation type plasma treatment equipment, whereas, the plasmatreatment equipment shown in FIG. 14 is a single wave excitation typeplasma treatment equipment. As shown in FIG. 14, the high frequencypower is supplied only to the cathode 4 and the suscepter electrode 8 isgrounded. Unlike the plasma treatment equipment shown in FIG. 12, thereis no high frequency power source 15 and no matching box 14. The DCpotential of the suscepter electrode 8 is the same as that of thechamber wall 10.

Yet another conventional plasma treatment equipment is shown in FIG. 15.There is no shower plate in the plasma treatment equipment shown in FIG.15, and the cathode 4, which serves as a plasma excitation electrode, isdisposed so as to face directly to the wafer suscepter 8. A shield 20 isprovided on back side periphery of the cathode 4. This plasma treatmentequipment has the same structure as that shown in FIG. 12 excepting theabove-mentioned points.

Further another conventional plasma treatment equipment is shown in FIG.16. The plasma treatment equipment shown in FIG. 15 is a so-calleddouble wave excitation type plasma treatment equipment, whereas, theplasma treatment equipment shown in FIG. 16 is a single wave excitationtype plasma treatment equipment. As shown in FIG. 16, the high frequencypower is supplied only to the cathode 4, and the suscepter electrode 8is grounded. There is no high frequency power source 15 and no matchingbox 14 (like that shown in FIG. 15). The DC potential of the suscepterelectrode 8 is the same as that of the chamber wall 10.

However, it is found as the result of detailed study of the conventionalplasma treatment equipment that the power consumption efficiency(proportion of the power consumed in plasma to the power supplied to aplasma excitation electrode 4) is not necessarily high, and particularlythe power consumption efficiency decreases remarkably as the frequencysupplied from a high frequency power source increases. Also it is foundby the inventors of the present invention that the decrease inefficiency becomes more remarkable as the base plate size increases.

In conventional plasma treatment equipment shown in FIG. 12, FIG. 14,FIG. 15, and FIG. 16, the suscepter impedance (impedance between thesuscepter and chamber) is high, and the impedance increases more as thefrequency of high frequency power supplied from the high frequency powersource 1 or 15 increases. In other words, the impedance depends on thefrequency. As a result, the high frequency current of the plasma, whichis connected to the suscepter impedance, decreases and the powerconsumption efficiency decreases remarkably as the frequency of highfrequency power supplied from the high frequency power source 1increases.

The power consumption efficiency is checked by a method as describedherein under.

(1) The chamber wall of plasma treatment equipment is replaced with anequivalent circuit comprising a concentrated constant circuit.

(2) Constants of circuits are determined by measuring the impedance ofchamber components using an impedance analyzer.

(3) The impedance of the whole chamber during discharge is measured byutilizing the relation that the impedance of the whole chamber duringdischarge is in complex conjugate to the impedance of the matching boxprovided with a 50 Ω dummy load on the input side.

(4) The plasma space is regarded as a series circuit of a resistance Rand capacitance C, and constants are calculated from values obtained in(2) and (3).

(5) Based on the equivalent circuit model of the chamber duringdischarge obtained by means of the above-mentioned method, the circuitcalculation is performed and the power consumption efficiency isderived.

As described herein above, the conventional plasma treatment equipmentis disadvantageous in that the film forming speed is low due to lowpower consumption efficiency and it is difficult to form an insulatingfilm with high dielectric strength when a insulating film is formed.

The inventors of the present invention have studied the cause of lowpower consumption efficiency. As the result, the cause of the low powerconsumption efficiency described herein under has been found.

In detail, first, in the suscepter electrode 8 side of the conventionalplasma treatment equipment shown in FIG. 12, as shown by an arrow shownin FIG. 13 which is an enlarged view of the suscepter electrode 8 shownin FIG. 12, the high frequency power is supplied from the high frequencypower source 1 to a coaxial cable, the matching circuit, the feederplate 3, and the plasma excitation electrode (cathode) 4. On the otherhand, in the case that the path of the high frequency current isaddressed, the current passes the plasma space (chamber 60) throughthese components, and the other electrode (suscepter electrode) 8, thevertical part of shield 12, the bellows 11, the bottom 10 b of thechamber wall 10 and the sidewall 10 s of the chamber wall 10. Then, thecurrent passes the housing of the matching box 2 and returns to theearth of the high frequency power source 1.

In the plasma treatment equipment shown in FIG. 14, the high frequencypower from the high frequency power source 1 is supplied through thecoaxial cable, the matching circuit, and the feeder plate 3 and to thecathode 4. On the other hand, in the case that the path of the highfrequency current is addressed, the current passes to the plasma spacethrough these components, further to the other electrode (suscepterelectrode) 8, the shaft 13, the bottom 10 b of the chamber wall 10, andthe side wall 10 s of the chamber wall 10. Then, the current passesthrough the housing of the matching box 2 and returns to the earth ofthe high frequency power source 1.

However, in the conventional plasma treatment equipment shown in FIG. 12and FIG. 14, the going current though the vertical part of the shield 12and the returning current through the chamber side wall 10 s are inparallel relation because the shaft 13 (or the vertical part of theshield 12 of the suscepter electrode 8) is parallel to the chamber sidewall 10 s, and the parallel relation results in increased mutualinductance. As the result, the power consumption efficiency isdecreased, and the film forming speed is reduced or the film quality isdeteriorated. The influence of the mutual inductance is larger as thebase plate 16 is larger and consequently as the distance between thefeeder plate 3 and the housing of the matching box 2 is larger, andparticularly the influence is remarkable in the case of the base platesize of 80 to 100 cm.

Such finding associated with the above-mentioned problem was found firstby the inventors of the present invention.

SUMMARY OF THE INVENTION

The present invention was accomplished to solve the above-mentionedproblem and it is the object of the present invention to provides plasmatreatment equipment having a small susceptance impedance with lowfrequency dependency and high power consumption efficiency which iscapable of forming a film of excellent quality at a film forming speedhigher than that of the conventional plasma treatment equipment.

Plasma treatment equipment of the present invention is characteristic inthat a chamber wall and an electrode of the same DC potential as thechamber are AC shorted.

Such shorting structure allows a high frequency current to pass theshorted part where the mutual inductance with the chamber wall issmaller than the vertical part of the electrode. The mutual inductanceof the high frequency current path is reduced and the consumptionefficiency of the high frequency power supplied to the path issignificantly improved.

It is necessary that the above-mentioned shorted part is located as nearas possible to the chamber wall in order to reduce the mutual inductanceeffectively, the shorted part is located desirably within a length of500 mm from the chamber wall side in horizontal direction.

Furthermore, the chamber side shorted part is located desirably within alength of 500 mm from the chamber side wall in the horizontal directionfrom the same view point described herein above.

In order to reduce the high frequency resistance of the path of the highfrequency current through the above-mentioned shorted part to reduce thepower loss by the shorted part, the above mentioned shorted partcomprises a plurality of shorted parts.

Plasma treatment equipment of the present invention is characteristic inthat a chamber wall and a shield of an electrode of the same DCpotential as the chamber are AC shorted. The above-mentioned shortedpart is desirably disposed so that the short point is locatedapproximately at point symmetrically with respect to the center of theelectrode, and thereby the path where the high frequency current flowsis uniformed and plasma treatment effect is distributed uniformly on anobject to be treated which is located at the center of the electrode.

The above-mentioned shorted part is desirably disposed so that the shortpoint is located approximately at point symmetrically with respect tothe center of the shield, and thereby the path where the high frequencycurrent flows is uniformed and plasma treatment effect is distributeduniformly on an object to be treated which is located at the center ofthe electrode.

The present invention provides a novel impedance measurement tool. Theimpedance measurement tool is provided with a probe comprising aconductor, an insulating sheath coated on the conductor, and aperipheral conductor coated on the insulating sheath, and a testing toolcomprising a plurality of lead wires electrically connected to theperipheral conductor of the probe and disposed radially from the centerof the probe and detachable terminals provided on the free ends of therespective lead wires for detaching from the object to be measured,wherein the impedance of all series components from the probe to thedetachable terminal through the lead wire are equalized each other.

By using the measurement tool having the above-mentioned structure, theimpedance which will be during plasma treatment is measured correctlywithout restriction on the distance between two points to be measuredthough the object to be measured is large.

A plurality of lead wires are connected to a plurality of points of anobject to be measured respectively to reduce the impedance of theabove-mentioned testing tool. As the result, the proportion of theimpedance of an object to be measure to the impedance of the wholemeasurement system including the object to be measured becomes high, andthe impedance is measured at higher accuracy.

The impedance measurement tool of the present invention may have theabove-mentioned testing tool which is attached to the probe so as to bedetachable from the probe with interposition of a probe attachment towhich the other respective ends of the plurality of lead wires areelectrically connected.

In the case of the structure as described herein above, various testingtools have been prepared previously, the impedance of various objects tobe measured with various sizes and various configuration are measured byuse of the same probe with changing a testing tool depending on theobject to be measured.

The above-mentioned plurality of lead wires are desirably connectedelectrically to each other at the midway of the respective lead wireswith another lead wire.

The number of paths of the measurement current is increased by employingthe structure described herein above, and the impedance of theabove-mentioned testing tool is reduced. As the result, the proportionof the impedance of an object to be measure to the impedance of thewhole measurement system including the object to be measured becomeshigh, and the impedance is measured at higher accuracy.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view of plasma treatment equipment inaccordance with the first embodiment of the plasma treatment equipment.

FIG. 2 is an enlarged view of the structure near a suscepter electrode.

FIG. 3A is a partial side view of a mesh metal plate and FIG. 3B is aplan view of the mesh metal plate.

FIGS. 4A and 4B are graphs for showing the measurement result inaccordance with the first embodiment of the plasma treatment equipmentand a conventional example.

FIG. 5 is a cross sectional view of plasma treatment equipment inaccordance with the second embodiment of the plasma treatment equipment.

FIG. 6 is a graph for showing the relation between the distance from ametal plate to a chamber wall and the mutual inductance.

FIG. 7 is a graph for showing the influence of the number of providedmetal plates.

FIG. 8 is a cross sectional view for showing a part of plasma treatmentequipment in accordance with the fifth embodiment of the plasmatreatment equipment.

FIG. 9 is a cross sectional view for showing a part of plasma treatmentequipment in accordance with the sixth embodiment of the plasmatreatment equipment.

FIG. 10 is a cross sectional view of plasma treatment equipment inaccordance with the seventh embodiment of the plasma treatmentequipment.

FIG. 11 is a cross sectional view for showing plasma treatment equipmentin accordance with the eighth embodiment of the plasma treatmentequipment.

FIG. 12 is a cross sectional view of plasma treatment equipment inaccordance with a conventional example.

FIG. 13 is a partially enlarged view of the suscepter electrode andperiphery thereof shown in FIG. 12.

FIG. 14 is a cross sectional view of plasma treatment equipment inaccordance with another conventional example.

FIG. 15 is a cross sectional view of plasma treatment equipment inaccordance with another conventional example.

FIG. 16 is a cross sectional view of plasma treatment equipment inaccordance with another conventional example.

FIG. 17 is a diagram for showing the first embodiment in accordance withthe impedance measurement tool of the present invention.

FIG. 18 is a diagram for showing the second embodiment in accordancewith the impedance measurement tool of the present invention.

FIGS. 19A and 19B are graphs for showing the result measured by use ofthe impedance measurement tool shown in FIG. 17 and a conventionalexample.

FIG. 20 is a graph for showing the result measured by use of theimpedance measurement tool shown in FIG. 17.

FIG. 21 is a diagram for describing a method for measuring the impedanceof the plasma treatment equipment shown in FIG. 1 by use of theimpedance measurement tool shown in FIG. 17.

FIG. 22 is a perspective view for showing the third embodiment inaccordance with the impedance measurement tool of the present invention.

FIG. 23 is a perspective view for showing the probe used for theimpedance measurement tool shown in FIG. 17, FIG. 18, and FIG. 22.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment ofPlasma Treatment Equipment

FIG. 1 shows an embodiment of plasma treatment equipment in accordancewith the present invention. In this plasma treatment equipment, metalplates 80 a and 80 b AC short between the chamber 10 and the shield 12of the electrode having the same DC potential as that of the chamber.

FIG. 2 shows the detail of the wafer suscepter electrode 8 side.

In the present embodiment, the chamber 10 and the shield 12 are ACshorted at two locations. Both one ends of the respective metal plates80 a and 80 b which are elastic springs are connected to the shortpoints B1 and B2 on the bottom 10 b of the chamber 10, and the otherends are both connected to the short points A1 and A2 on the shield 12for shorting. The short points B1 and B2 are located near the outermostof the shield 12 so that the distance to the side wall 10 s of thechamber wall 10 is set as short as possible. In other words, the shortpoints B1 and B2 are set preferably at the nearest point to or near thenearest point to the side wall 10 s of the chamber wall 10.

Inconel 625 (brand name) is preferably used as the material of the metalplate in the view point of reduced gas release in vacuum, and a metalplate of the size 20 mm×40 cm×0.3 mm is used in this embodiment.

Though a plate form material is used in the present embodiment, a meshform material may be used preferably. Turtle back form material andlattice from material as shown in FIG. 3A may be used preferably amongmesh form materials. A cylindrical mesh form metal plate is preferablydisposed along the periphery of the suscepter shield 12. FIG. 3B is across sectional view along the line 3—3 in FIG. 1, in which metal platesformed of turtle back form mesh are disposed instead of the metal plates80 a and 80 b. Exhaustion of gas in the chamber is not disturbed and theflow of high frequency current is uniformed because the metal plate ismesh form. Furthermore the turtle back form mesh is elastic and easy tofollow the vertical motion of the bellows.

In the present embodiment, the short points A1 and A2 on the shield 12are set immediately above the short points B1 and B2.

In the plasma treatment equipment of the present embodiment, the highfrequency power is supplied from the high frequency power source 1 tothe coaxial cable, matching circuit, feeder plate 3, and plasmaexcitation electrode (cathode) 4. This plasma treatment equipment is thesame as the conventional plasma treatment equipment in this point. Onthe other hand, in the case that the path of the high frequency currentis addressed, a current passes the plasma space (chamber 60) throughthese components, and passes the other electrode (suscepter electrode)8, the horizontal part of the shield 12, metal plates 80 a and 80 b, thebottom 10 b of the chamber wall 10, and the side wall 10 s of thechamber wall 10. Then the current passes the housing of the matching box2, and returns to the earth of the high frequency power source 1.

In the conventional plasma treatment equipment, the high frequencycurrent passes the vertical part of the shield 12. The increment of thesize of the base plate 16 involves the increment of the distance betweenthe shield 12 and the chamber wall. The mutual inductance caused from ahigh frequency current which is flowing in the shield 12 and the chamberside wall 10 s increases as the distance between the shield 12 and thechamber side wall 10 s increases. As a result the power consumptionefficiency decreases. Therefore, the conventional plasma treatmentequipment having a large sized base plate is haunted by low powerconsumption efficiency.

On the other hand, in the plasma treatment equipment in accordance withthe present embodiment, because the high frequency current passes themetal plates 80 a and 80 b which are located nearer to the chamber wall10 s than the vertical part of the shield 12, the mutual inductance issignificantly reduced and the power consumption efficiency issignificantly increased.

An insulating film consisting of silicon nitride was formed by use ofequipment shown in FIG. 1 and equipment shown in FIG. 12, and the powerconsumption efficiency was measured. As a result, the power consumptionefficiency of the equipment shown in FIG. 1 was double that of theequipment shown in FIG. 12.

The suscepter impedance was measured. The results are shown in FIG. 4.FIG. 4A shows the result obtained by the plasma treatment equipment(conventional) shown in FIG. 12 and FIG. 4B shows the result obtained bythe plasma treatment equipment shown in FIG. 1.

As shown in FIG. 4, the suscepter impedance of the plasma treatmentequipment in accordance with the present embodiment is much smaller thanthat of the conventional plasma treatment equipment, and also thefrequency dependency is small.

Second Embodiment of Plasma Treatment Equipment

FIG. 5 shows plasma treatment equipment in accordance with the secondembodiment.

The present embodiment is an example in which metal plates 80 a and 80 bare provided to the plasma treatment equipment shown in FIG. 14, namely,a single wave excitation type plasma treatment equipment.

In detail, the metal plates 80 a and 80 b AC short between the chamberwall 10 and the electrode (suscepter electrode) 8 having the same DCpotential as the chamber. The present embodiment is the same as thefirst embodiment excepting the above-mentioned point.

Third Embodiment of Plasma Treatment Equipment

In the present example, the influence of the position where the metalplate is provided is studied.

In detail, in the equipment shown in FIGS. 1 and 2, the short points B1and B2 of the metal plate on the chamber wall 10 are located immediatelyunder the short points A1 and A2 of the metal plate on the shield 12,and the magnitude of the mutual inductance is measured by changing thedistance x from the short point to the chamber side wall 10 s.

The result is shown in FIG. 6. As shown in FIG. 6, the inductance beginsto decrease from the distance x of 500 mm with decreasing the distancex, the rate of reduction becomes large from around 350 mm, and the rateof reduction becomes larger from around 200 mm.

Accordingly, it is preferable that the distance between the short pointand the chamber side wall is 500 mm or shorter, the distance of 350 mmor shorter is more preferable, and the distance of 200 mm or shorter isfurther more preferable. The most preferable distance is the shortestdistance from the chamber side wall 10 s or near the shortest distance.

Fourth Embodiment of Plasma Treatment Equipment

The influence of the number of metal plates to be provided is studied.

In detail, the magnitude of inductance is measured by changing thenumber of provided metal plates. Metal plates are disposed approximatelyin point symmetry with respect to the center of the shield.

The result is shown in FIG. 7.

As shown in FIG. 7, the inductance decreases with increasing the numberof metal plates, however the rate of reduction is the same for both fourmetal plates and eight metal plates. In other words, the inductancereduction saturates at four metal plates. Accordingly, four metal platesare preferable. Addressing the fact that the path of high frequencycurrent is uniform and the object to be treated which is placed on thecenter of the electrode is subjected to plasma treatment effectuniformly when the square electrode is used, four or eight metal platesare preferably provided.

Fifth Embodiment of Plasma Treatment Equipment

The fifth embodiment is shown in FIG. 8.

The present example is an example in which a metal plate 80 a isprovided inclined. In detail, one end of the metal plate 80 a is shortedat the point B1 on the shield 12 located nearest to the chamber sidewall, and the other end of the metal plate 80 a is shorted at the pointA1 on the chamber side wall not immediately under B1, as the result themetal plate is disposed inclined. In the case that a metal plate 80 a isdisposed inclined, the inclination angle θ is preferably smaller than 45degrees to suppress the mutual inductance low.

The power consumption efficiency of the fifth embodiment is higher thanthat of the first embodiment.

Sixth Embodiment of Plasma Treatment Equipment

FIG. 9 shows the sixth embodiment.

In the present example, the metal plate 80 a is disposed approximatelyperpendicular to the chamber side wall 10 s, in other words, disposedapproximately horizontal to the suscepter electrode 8.

The power consumption efficiency is higher than that of the fifthembodiment.

Seventh Embodiment of Plasma Treatment Equipment

FIG. 10 shows the seventh embodiment.

The present example is an example in which a metal plate is provided inthe conventional plasma treatment equipment shown in FIG. 15.

The present embodiment is the same as that of the first embodimentexcepting the above-mentioned point. The plasma treatment equipment inaccordance with the present example is superior in power consumptionefficiency, film forming speed, and dielectric strength to theconventional plasma treatment equipment shown in FIG. 15.

Eighth embodiment of Plasma Treatment Equipment

FIG. 11 shows the eighth embodiment.

The present example is an example in which a metal plate is provided inthe conventional plasma treatment equipment shown in FIG. 16.

The present embodiment is the same as the first embodiment excepting theabove-mentioned point.

The plasma treatment equipment in accordance with the present example issuperior in power consumption efficiency, film forming speed, anddielectric strength to the conventional plasma treatment equipment shownin FIG. 16.

In the invention described herein above, it is possible to improve thepower consumption efficiency to the higher level in comparison with theconventional plasma treatment equipment by reducing the impedance.

However the desired power consumption efficiency level is not achievedyet.

The inventors of the present invention studied the cause, and concludedthat the cause was attributed to the impedance of the high frequencypower source 1 and the impedance of the matching circuit.

In detail, the base plate size has been smaller than 80 cm, the plasmadensity has been not high, and the used frequency has been 13.56 MHz inthe conventional plasma treatment equipment, as the result, theimpedance of the high frequency power source and the impedance of thematching circuit have not influenced the power consumption efficiency.However, the inventors of the present invention have concluded that theimpedance of the high frequency power source and the impedance of thematching circuit can not be negligible in the situation that the highplasma density is used, the large sized base plate is used, and thefrequency higher than 13.56 MHz is used. The resistance value of theconventional high frequency power source is 50 Ω.

A test was conducted based on this idea. As the result, it was foundthat the power consumption efficiency was improved when the resistancevalue of the high frequency power source was smaller than 50 Ω and theresistance value of the matching circuit was smaller than 50 Ω in thecase that the frequency higher than 13.56 MHz was used. Particularly, 10Ω or smaller is more preferable.

The fixture (testing tool) is used for the impedance measurement tooland the impedance measurement method of a plasma equipment used formanufacturing semiconductors, LCD, and MR heads.

Prior art of the fixture is described herein under.

A plasma equipment for generating plasma by means of glow dischargingusing a high frequency power source has been used in film formingprocess and etching process. In such process, impedance which isparasitic in the equipment results in reduced effective power ratio,which indicates the ratio of the power effectively used in plasma spaceto the supplied power, and the reduced power ratio adversely affects thefilm forming speed and the dielectric strength of film and causesreduced productivity and deteriorated film quality. To improve thesedisadvantages, it is necessary to measure the impedance which isparasitic in the equipment quantitatively.

To measure the impedance which is parasitic in the equipment, animpedance analyzer having coaxial probe or an network analyzer has beenused. However, the measurable size of an object to be measured or themeasurable length between two points is limited because of theconfiguration of the probe.

Heretofore, to solve this problem, a method in which a lead wire havinga length corresponding to the size of an object to be measured or thelength between two point attached to the earth side of the probe is usedas a fixture and the residual impedance is corrected has been known asthe most simple method.

However, the above-mentioned conventional fixture is involved in aproblem as described herein under.

(1) Because a current flows asymmetrically through an object to bemeasured, the impedance of the object to be measured is measured onlypartially and the correct impedance is not measured.

(2) Because the current is restricted by the impedance of an earth wireattached as a fixture, the low impedance is measured not correctly.

The inventors of the present invention invented a novel impedancemeasurement tool which can measure the impedance without restriction onthe size of an object to be measured or the length between two pointsand with a current flowing uniformly through the object to be measured,and which can be designed so that the residual impedance value does notaffect the measurement of the impedance of the object to be measured.

First Embodiment of Impedance Measurement Tool

The first embodiment of an impedance measurement tool in accordance withthe present invention is described with reference to FIG. 17. Thisfixture is provided with a plurality of lead wires 101 a to 101 h of thesame impedance having respective one ends connected to the probeattachment 104.

The probe attachment 104 is formed of, for example, a copper platehaving a size of 50 mm×10 mm×0.5 mm so as to have a clamp 106 and aring. The diameter of the ring is formed so as to fit on the outside ofthe probe 105.

The one ends of the lead wires 101 a to 101 h are connected electricallyto the probe attachment 104 by soldering or the like.

Detachable terminal (crimp-style terminal) 102 a to 102 h are attachedon the other ends of the lead wires 101 a to 101 h for attaching to theobject to be measured.

When this fixture is used, the probe 105 is inserted into the ring 104of the probe attachment 104 and the clamp 106 is tightened. Therespective crimp-style terminals 102 a to 102 h of the lead wires 101 ato 101 h are screwed with screws 114 detachably on the object to bemeasured so as to be symmetric as shown in FIG. 21. The probe 105comprises a lead wire 110, an insulating sheath 112 provided outside thelead wire 110, and a peripheral conductor 111 provided on the insulatingsheath 112 (see FIG. 23). The probe 105 is connected to an impedancemeasurement tool not shown in the drawing through a coaxial cable.

The lead wires 101 a to 101 h consist of, for example, aluminum, copper,silver, or gold, otherwise may comprise plated layers having a thicknessof 50 μm or thicker consisting of silver or gold.

The fixture is arranged as described herein above, and the impedance ofthe object to be measured is measured. The result is shown in FIG. 19.FIG. 19A shows the result of the conventional example, and FIG. 19Bshows the result of the present example. In the conventional exampleshown in FIG. 19A is measured by use of the probe 105 shown in FIG. 23.

The impedance Z is represented by ωL-1/ωC, a hyperbola represented by1/ωC and a straight line represented by ωL form an inflection point at acertain frequency f₀, and the phase changes at this inflection point.However, the inflection point is not clear in FIG. 19A which shows theresult of the conventional example.

On the other hand, in FIG. 19B which shows the result of the presentexample, the hyperbola, straight line, and inflection point are clear atthe frequency f₀, it is obvious that the impedance is measuredcorrectly.

It is desirable to use copper lead wires 101 a to 101 h because of lowspecific resistivity to reduce the restriction on the current due toimpedance of the lead wires 101 a to 101 h. The use of copper wire isadvantageous also in that the parasitic capacitance between an object tobe measure and the lead wires can be reduced.

Next, a method for measuring the impedance of the path of the plasmatreatment equipment shown in FIG. 1 from the feeder plate 3, to plasmaexcitation electrode (cathode) 4, plasma space 60, suscepter electrode8, horizontal part of the shield 12, metal plates 80 a and 80 b, bottom10 b of the chamber wall 10, side wall 10 s of the chamber wall 10, andhousing 21 by use of the impedance measurement tool described in thepresent embodiment is described with reference to FIG. 21.

First, the high frequency power source 1 and the matching box 2 of theplasma treatment equipment is taken out from the plasma treatmentequipment. The lead wire 110 of the probe 105 of the impedancemeasurement tool is connected to the lead wire 113 which connectsbetween the matching box 2 and the feeder plate 3. Next, the crimp-styleterminals 102 a to 102 h connected to the lead wires 101 a to 101 h ofthe impedance measurement tool are screwed with screws 114 on thehousing 21 of the plasma treatment equipment so as to be approximatelypoint symmetrical with respect to the center of the feeder plate 3.After the impedance measurement tool is arranged as described hereinabove, a measurement signal is supplied to the lead wire 110, and theimpedance of the path from the feeder plate 3 of the plasma treatmentequipment to the housing 21 through the plasma space 60 is measured.

For measurement, the fixture is attached to the measurement probe whichhas been calibrated at 0 S, 0 Ω, and 50 Ω, at that time the influence ofthe residual impedance of the fixture can be solved by open and shortcorrection. The same effect is obtained by calibration of the probehaving the attached fixture as shown in FIG. 20.

Second Embodiment of Impedance Measurement Tool

The second embodiment of an impedance measurement tool in accordancewith the present invention is described with reference to FIG. 18. Thisimpedance measurement tool is used for measuring a large sized object tobe measured, in this case a shorting lead wire 105 is provided to shortbetween a plurality of lead wires 101 a to 101 h.

The impedance of the testing tool can be reduced by use of thisimpedance measurement tool because the path of measurement currentincreases. As the result, the proportion of the impedance of the objectto be measured to the impedance of the whole measurement systemincluding the object to be measured becomes high, and the impedance ismeasured at higher accuracy.

Third Embodiment of Impedance Measurement Tool

The third embodiment of an impedance measurement tool of the presentinvention is shown in FIG. 22. This embodiment is different from thefirst embodiment in that one ends of a plurality of lead wires 101 a to101 h described in the above-mentioned first embodiment are connected bysoldering directly to soldering terminals 121 on the peripheralconductor 111 of the probe 105 without the probe attachment, and otherstructures are the same as those of the above-mentioned firstembodiment. The same effect as obtained by use of the impedancemeasurement tool of the present invention in accordance with the firstembodiment is obtained by applying this embodiment.

According to the present invention, the power consumption efficiency isimproved, the film forming speed is faster, and the better film qualityis realized. Furthermore, the suscepter impedance is reduced and thefrequency dependency is reduced.

What is claimed is:
 1. Plasma treatment equipment in which a chamberwall and a susceptor electrode having the same DC potential are ACshorted to each other.
 2. The plasma treatment equipment according toclaim 1, wherein said chamber wall and said susceptor electrode areshorted to each other at a location that is within a distance shorterthan 500 mm from a side wall of the chamber wall.
 3. The plasmatreatment equipment according to claim 1, wherein said susceptorelectrode is shorted to said chamber wall at a short point on a bottomwall of the chamber wall, said short point being located within adistance shorter than 500 mm from a side wall of the chamber wall asmeasured along the bottom wall.
 4. The plasma treatment equipmentaccording to claim 3, wherein said susceptor electrode is shorted tosaid chamber wall by a metal plate, said metal plate being connectedbetween the short point on the bottom wall and a second short point on ashield of the susceptor electrode.
 5. The plasma treatment equipmentaccording to claim 3, wherein the said metal plate is inclined withrespect to the bottom wall, and an angle formed between said metal plateand the bottom wall is less than 45 degrees.
 6. The plasma treatmentequipment according to claim 1, wherein said chamber wall and saidsusceptor electrode are shorted at a plurality of short points.
 7. Theplasma treatment equipment according to claim 6, wherein the pluralityof short points are disposed approximately symmetrically with respect toa center of said susceptor electrode.
 8. The plasma treatment equipmentaccording to claim 6, wherein the plurality of short points are disposedapproximately symmetrically with respect to a center of a shield of saidsusceptor electrode.
 9. The plasma treatment equipment according toclaim 1, wherein said susceptor electrode comprises a shield having thesame DC potential as said chamber wall, and said shield and said chamberwall are AC shorted to each other.
 10. The plasma treatment equipmentaccording to claim 1, wherein said susceptor electrode is shorted to aside wall of the chamber wall.
 11. Plasma treatment equipmentcomprising: a plasma chamber having a bottom wall and a side wall; and asusceptor electrode disposed within the plasma chamber, said susceptorelectrode comprising a generally planar shaped electrode portionoriented substantially parallel to the bottom wall of the plasmachamber, said susceptor electrode further comprising a generally planarshaped shield disposed adjacent to said electrode portion, said shieldbeing located between said electrode portion and the bottom wall of theplasma chamber, wherein the bottom wall of the plasma chamber and theshield of the susceptor electrode have the same DC potential, whereinthe bottom wall of the plasma chamber and the shield of the susceptorelectrode are AC shorted to each other by a metal plate, said metalplate having a first end connected to a first short point on the shieldand a second end connected to a second short point on the bottom wall ofthe chamber, and wherein the second short point is located within 500 mmof the side wall of the plasma chamber.
 12. Plasma treatment equipmentcomprising: a plasma chamber having a bottom wall and a side wall; and asusceptor electrode disposed within the plasma chamber, said susceptorelectrode comprising a generally planar shaped electrode portionoriented substantially parallel to the bottom wall of the plasmachamber, said susceptor electrode further comprising a generally planarshaped shield disposed adjacent to said electrode portion, said shieldbeing located between said electrode portion and the bottom wall of theplasma chamber, wherein the side wall of the plasma chamber and theshield of the susceptor electrode have the same DC potential, andwherein the side wall of the plasma chamber and the shield of thesusceptor electrode are AC shorted to each other by a metal plate, saidmetal plate having a first end connected to a first short point on theshield and a second end connected to a second short point on the sidewall of the chamber.